PSMN6R5-25YLC Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 25 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN6R5-25YLC
N-channel 25 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology
Table 6. Characteristics …continued
Symbol
Parameter
Q_oss
output charge
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
t_a
reverse recovery rise time
t_b
reverse recovery fall time
Conditions
V_GS = 0 V; V_DS = 12 V; f = 1 MHz
I_S = 20 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 12 V
V_GS = 0 V; I_S = 20 A;
dI_S/dt = -100 A/µs; V_DS = 12 V;
see Figure 18
Min Typ Max Unit
-
5.7 -
nC
-
0.86 1.1 V
-
24
-
ns
-
15
-
nC
-
14
-
ns
-
10
-
ns
80
I_D
(A)
60
10 5.0 4.5
003aag139
V_GS(V) = 3.5
40
3.0
2.8
20
2.6
2.4
2.2
0
0
0.5
1
1.5
2
V_DS(V)
25
R_DSon
(mΩ)
20
003aag140
15
10
5
0
0
4
8
12
16
V_GS (V)
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN6R5-25YLC
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
© NXP B.V. 2011. All rights reserved.
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