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| PSMN6R0-30YL_10 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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NXP Semiconductors
PSMN6R0-30YL
N-channel TrenchMOS logic level FET
003aac626
80
IS
(A)
60
40
Tj = 150 °C
20
25 °C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN6R0-30YL_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 4 Januari 2010
© NXP B.V. 2010. All rights reserved.
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