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PSMN6R0-30YL_10 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET
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NXP Semiconductors
PSMN6R0-30YL
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
VGS(pl)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
Min
ID = 20 A; VGS = 0 V; Tj = 25 °C; tav= 100 ns
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS= VGS; Tj = 25 °C; see Figure 11
and 12
ID = 1 mA; VDS= VGS; Tj = 150 °C; see Figure 12
ID = 1 mA; VDS= VGS; Tj = -55 °C; see Figure 12
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 150 °C; see Figure 13
VGS = 10 V; ID = 15 A; Tj = 25 °C
f = 1 MHz
35
30
27
1.3
0.65
-
-
-
-
-
-
-
-
-
ID = 10 A; VDS = 12 V; VGS = 4.5 V;
-
see Figure 14 and 15
ID = 10 A; VDS = 12 V; VGS = 10 V; see Figure 14 -
and 15
ID = 0 A; VDS = 0 V; VGS = 10 V
-
ID = 10 A; VDS = 12 V; VGS = 4.5 V;
-
see Figure 14 and 15
-
-
-
VDS = 12 V; see Figure 14 and 15
-
VDS = 12 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
see Figure 16
-
-
VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
-
RG(ext) = 4.7 Ω
-
-
-
Typ Max
-
-
-
-
-
-
1.7 2.15
-
-
-
2.45
-
1
-
100
-
100
-
100
6.18 7.87
-
10.5
4.26 6
0.63 1.5
11
-
24
-
22
-
4.2 -
2.4 -
1.8 -
3.08 -
2.6 -
1425 -
313 -
155 -
25
-
43
-
31
-
11
-
Unit
V
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
PSMN6R0-30YL_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 4 Januari 2010
© NXP B.V. 2010. All rights reserved.
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