PSMN6R0-30YL_10 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN6R0-30YL
N-channel TrenchMOS logic level FET
003aac629
003aac628
80
10
g_fs
(S)
R_DSon
(mΩ)
60
8
40
6
20
0
0
20
40 I_D (A) 60
4
2
4
6
8 _{VGS (V)} 10
Fig 9. Forward transconductance as a function of
drain current; typical values
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aac337
3
VGS (th)
(V)
2
1
max
typ
min
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PSMN6R0-30YL_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 4 Januari 2010
© NXP B.V. 2010. All rights reserved.
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