PSMN039-100YS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET

NXP Semiconductors
PSMN039-100YS
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
180
R_DSon
(mΩ)
150
V_GS(V) = 4.6
003aae099
120
90
60
5
5.5
30
10
0
0
5
10
15
20
25
30
I_D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
8
6
80V
20V
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V_DS= 50V
10⁴
C
(pF)
10³
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C_iss
4
10²
C_oss
C_rss
2
0
0
10
20
30
Q_G (nC)
10
10^-1
1
10
10²
V_DS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Drain-source on-state resistance as a function
of drain current; typical values
PSMN039-100YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 April 2010
© NXP B.V. 2010. All rights reserved.
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