PSMN039-100YS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET

NXP Semiconductors
PSMN039-100YS
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
100
R_DSon
(mΩ)
80
003aae100
60
40
20
4
8
12
16
20
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Gate-source threshold voltage as a function of
of gate-source voltage; typical values
junction temperature
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
3.2
a
2.4
1.6
003aad774
0.8
10^−5
10^−6
0
2
4
6
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN039-100YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 April 2010
© NXP B.V. 2010. All rights reserved.
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