English
Language : 

PSMN039-100YS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
◁
NXP Semiconductors
PSMN039-100YS
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
trr
reverse recovery time IS = 5 A; dIS/dt = 100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 50 V
Min Typ Max Unit
-
0.8 1.2 V
-
44
-
ns
-
78
-
nC
50
gfs
(S)
40
30
20
10
0
0
003aae096
5
10
15
20
25
ID (A)
20
ID
(A)
15
003aae095
10
5
Tj = 175 °C
Tj = 25 °C
0
0
1
2
3
4
5
6
VGS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
2000
C
(pF)
1500
003aae097
Ciss
1000
Crss
500
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
30
ID
(A)
10 6.5 5.5
5
003aae094
20
10
VGS(V) = 4.55
0
0
4
8
12
16
20
VGS (V)
0
0
0.5
1
1.5
2
VDS(V)
Fig 7. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
PSMN039-100YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 April 2010
© NXP B.V. 2010. All rights reserved.
7 of 15
 ▷