PSMN026-80YS Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET

NXP Semiconductors
PSMN026-80YS
N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET
60
R_DSon
(mΩ)
50
V_GS (V) = 5
40
30
20
10
0
20
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5.5
6 20 ₁₀
20
40
60
80
ID (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 14. Gate charge waveform definitions
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
10
V_GS
(V)
8
6
16V
64V
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V_DS = 40V
10⁴
C
(pF)
10³
4
10²
2
0
0
5
10
15
20
25
Q_G (nC)
10
10^-1
1
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C_iss
C_oss
C_rss
10
10²
V_DS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN026-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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