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PSMN026-80YS Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET
NXP Semiconductors
PSMN026-80YS
N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET
50
gfs
(S)
40
30
20
10
0
0
003aad277
20
40
60
ID (A)
10−1
ID
(A)
10−2
10−3
10−4
10−5
10−6
0
03aa35
min typ max
2
4
6
VGS (V)
Fig 9. Forward transconductance as a function of
drain current; typical values
5
VGS(th)
(V)
4
003aad280
max
3
typ
2
min
1
0
−60
0
60
120
180
Tj (°C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aad045
2.5
a
2.0
1.5
1.0
0.5
0.0
-60 -30 0 30 60 90 120 150 180
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN026-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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