PSMN026-80YS Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET

NXP Semiconductors
PSMN026-80YS
N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 5 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 15 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 40 V
[1] Tested to JEDEC standards where applicable.
80
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2000
20 ₁₀
I_D
8
C
(A)
(pF)
6
60
5.5
1600
Min Typ Max Unit
-
0.8 1.2 V
-
36
-
ns
-
52
-
nC
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C_iss
40
5
20
V_GS (V) = 4.5
0
0
1
2
3
4
5
V_DS (V)
1200
C_rss
800
400
0
3
6
9
12
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Input and reverse transfer capacitances as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
50
I_D
(A)
40
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60
R_DSon
(mΩ)
50
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30
20
10
0
0
T_j = 150 °C
T_j = 175 °C
T_j = 25 °C
2
4
V_GS (V) ⁶
40
30
20
4
8
12
16
20
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN026-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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