PSMN015-60PS Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel 60 V 14.8 mΩ standard level MOSFET

NXP Semiconductors
PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET
60
R_DSon
(mΩ)
45
V_GS(V) = 4.5
4.7
003aae037
30
15
0
0
5.5
6.5
10
15
30
45
60
I _D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
8
6
4
2
V_DS = 30 V
12 V
003aae038
48 V
10⁴
C
(pF)
10³
10²
003aae034
C_iss
C_oss
C_rss
0
0
10
20
30
Q_G (nC)
10
10^-1
1
10
10²
V_DS(V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN015-60PS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 22 February 2010
© NXP B.V. 2010. All rights reserved.
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