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PSMN015-60PS Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 60 V 14.8 mΩ standard level MOSFET
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NXP Semiconductors
PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C
trr
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 30 V
50
gfs
(S)
40
003aae033
30
20
10
0
0
10
20
30
40
50
ID (A)
50
ID
(A)
40
30
20
10
0
0
Min Typ Max Unit
-
0.8 1.2 V
-
31
-
ns
-
28.5 -
nC
003aae032
Tj = 175 °C
Tj = 25 °C
2
4
6
VGS(V)
Fig 5. Forward transconductance as a function of
drain current; typical values
2000
C
(pF)
1500
003aae035
Ciss
1000
Crss
500
0
0
2
4
6
8
10
VGS(V)
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
50
RDSon
(mΩ)
40
003aae036
30
20
10
0
0
5
10
15
20
VGS(V)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN015-60PS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 22 February 2010
© NXP B.V. 2010. All rights reserved.
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