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| PSMN015-60PS Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 60 V 14.8 mΩ standard level MOSFET | |||
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NXP Semiconductors
PSMN015-60PS
N-channel 60 V 14.8 m⦠standard level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg
Tj
Tsld(M)
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 50 A; Vsup ⤠60 V;
drain-source avalanche RGS = 50 â¦; unclamped
energy
Min Max Unit
-
60
V
-
60
V
-20 20
V
-
36
A
-
50
A
-
201 A
-
86
W
-55 175 °C
-55 175 °C
-
260 °C
-
50
A
-
201 A
-
44
mJ
PSMN015-60PS_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 22 February 2010
© NXP B.V. 2010. All rights reserved.
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