MMBZXVAL Datasheet, PDF (9/15 Pages) NXP Semiconductors – Double ESD protection diodes for transient overvoltage suppression

NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
I
I_PPM
I_PP
−V_CL −V_BR −V_RWM
−+
P-N
−I_RM
−I_R
V
I_R
−V_CL −V_BR −V_RWM
I_RM
−I_RM
−I_R
V_RWM V_BR V_CL
−
+
−I_PP
−I_PPM
006aab324
Fig 7. V-I characteristics for a unidirectional
ESD protection diode
−I_PP
−I_PPM
006aab325
Fig 8. V-I characteristics for a bidirectional
ESD protection diode
8. Application information
The MMBZxVAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The devices provide a surge capability of 40 W per line for a 10/1000 µs waveform.
line 1 to be protected
line 2 to be protected
MMBZxVAL
GND
line 1 to be protected
MMBZxVAL
GND
unidirectional protection
of two lines
bidirectional protection
of one line
006aab326
Fig 9. Typical application: ESD and transient voltage protection of data lines
MMBZXVAL_SER_1
Product data sheet
Rev. 01 — 1 September 2008
© NXP B.V. 2008. All rights reserved.
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