MMBZXVAL Datasheet, PDF (4/15 Pages) NXP Semiconductors – Double ESD protection diodes for transient overvoltage suppression

NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
P_PPM
I_PPM
rated peak pulse power
rated peak pulse current
MMBZ12VAL
MMBZ12VAL/DG
t_p = 10/1000 µs
t_p = 10/1000 µs
[1][2] _-
[1][2]
-
MMBZ15VAL
-
MMBZ15VAL/DG
MMBZ18VAL
-
MMBZ18VAL/DG
MMBZ20VAL
-
MMBZ20VAL/DG
MMBZ27VAL
-
MMBZ27VAL/DG
MMBZ33VAL
-
MMBZ33VAL/DG
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
[3] _-
[4] _-
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
40
W
2.35 A
1.9
A
1.6
A
1.4
A
1
A
0.87 A
265
mW
360
mW
150
°C
+150 °C
+150 °C
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
Table 7. ESD maximum ratings
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
V_ESD
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.
Min Max Unit
[1][2]
-
-
30 kV
2
kV
MMBZXVAL_SER_1
Product data sheet
Rev. 01 — 1 September 2008
© NXP B.V. 2008. All rights reserved.
4 of 15