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| MMBZXVAL Datasheet, PDF (2/15 Pages) NXP Semiconductors – Double ESD protection diodes for transient overvoltage suppression | |||
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NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
Cd
diode capacitance
f = 1 MHz; VR = 0 V
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
Min Typ Max Unit
-
-
8.5 V
-
-
12
V
-
-
14.5 V
-
-
17
V
-
-
22
V
-
-
26
V
-
110 140 pF
-
85
105 pF
-
70
90
pF
-
65
80
pF
-
48
60
pF
-
45
55
pF
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
cathode (diode 1)
cathode (diode 2)
common anode
Simpliï¬ed outline
3
Graphic symbol
3
1
2
1
2
006aaa154
MMBZXVAL_SER_1
Product data sheet
Rev. 01 â 1 September 2008
© NXP B.V. 2008. All rights reserved.
2 of 15
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