BUK6213-30C Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 13. Gate charge waveform definitions
10⁴
C
(pF)
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10
V_GS
(V)
8
6
4
V_DS = 14 V
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24 V
2
0
0
4
8
12
16
20
Q_G (nC)
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
50
I_S
(A)
40
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10³
C_iss
10²
10^−2
10^−1
1
C_oss
C_rss
10
10²
V_DS (V)
V_GS = 0 V; f = 1 MHz
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
30
20
T_j = 175 °C
T_j = 25 °C
10
0
0
0.2 0.4 0.6 0.8
1
1.2
V_SD (V)
V_GS = 0 V
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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