BUK6213-30C Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6213-30C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 25 V
Min Typ Max Unit
-
0.95 1.2 V
-
31.9 -
ns
-
25.4 -
nC
40
g_fs
(S)
30
003aae916
20
10
0
0
10
20
30
40
50
I_D (A)
Fig 5.
T_j = 25 °C; V_DS = 15 V
Forward transconductance as a function of
drain current; typical values
50
I_D
(A)
40
003aae918
30
20
10
0
0
T_j = 175 °C
T_j = 25 °C
1
2
3
4
5
6
V_GS (V)
60
I_D
(A)
40
8
6
10
003aae917
5
V_GS (V) = 4.5
4
20
3.8
3.6
3.4
3.2
0
0
0.5
1
1.5
2
V_DS (V)
T_j = 25 °C; t_p = 300 μs
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
30
R_DSon
(mΩ)
25
003aae919
20
15
10
5
0
0
4
8
12
16
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
BUK6213-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
7 of 14