BUK6213-30C Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

BUK6213-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for standard and logic level
gate drives
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
Static characteristics
R_DSon
drain-source on-state
resistance
Avalanche ruggedness
V_GS = 10 V; I_D = 10 A;
T_j = 25 °C; see Figure 11
E_DS(AL)S
non-repetitive
I_D = 47 A; V_sup ≤ 30 V;
drain-source avalanche R_GS = 50 Ω; V_GS = 10 V;
energy
T_j(init) = 25 °C; unclamped
Dynamic characteristics
Q_GD
gate-drain charge
I_D = 25 A; V_DS = 24 V;
V_GS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
-
-
30 V
-
-
47 A
-
-
60 W
-
11.9 14 mΩ
-
-
30 mJ
-
4.77 -
nC