BF1202_10 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel dual-gate PoLo MOS-FETs

NXP Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1202; BF1202R; BF1202WR
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 μH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: V_DS = 5 V; V_G2-S = 4 V; I_D = 12 mA; T_amb = 25 C
f
(MHz)
s₁₁
MAGNITUDE
(ratio)
ANGLE
(deg)
s₂₁
MAGNITUDE
(ratio)
ANGLE
(deg)
s₁₂
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.988
3.26
2.989
176.2
0.0005
92.6
100
0.988
6.52
3.017
172.5
0.0009
88.0
200
0.984
12.99
2.990
165.0
0.0018
82.5
300
0.977
19.39
2.949
157.6
0.0027
78.2
400
0.965
25.65
2.913
150.3
0.0036
75.4
500
0.951
31.76
2.853
143.2
0.0039
71.8
600
0.936
37.68
2.793
136.3
0.0042
69.9
700
0.919
43.42
2.727
129.5
0.0044
68.9
800
0.903
48.94
2.664
123.0
0.0043
68.5
900
0.887
54.25
2.593
116.7
0.0041
70.7
1 000
0.870
59.34
2.518
110.5
0.0038
72.4
s₂₂
MAGNITUDE
(ratio)
0.995
0.995
0.994
0.992
0.990
0.988
0.986
0.984
0.980
0.975
0.970
ANGLE
(deg)
1.50
3.01
5.95
8.86
11.79
14.65
17.41
20.10
22.69
25.27
27.90
Table 2 Noise data: V_DS = 5 V; V_G2-S = 4 V; I_D = 12 mA; T_amb = 25 C
f
(MHz)
F_min
_opt
R_n
(dB)
(ratio)
(deg)
()
400
0.9
0.805
28.5
50
800
1.1
0.725
47.2
40
2010 Sep 16
9