PSMN9R0-30YL_10 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN9R0-30YL
N-channel TrenchMOS logic level FET
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aac540
10
V_GS
(V)
8
V_DS = 12 (V)
6
V_DS = 19 (V)
4
2
0
0
5
10
15
20
Q_G (nC)
Fig 14. Gate charge waveform definitions
1400
C
(pF)
C_iss
1200
1000
800
C_oss
600
400
C_rss
200
0
10^-1
1
003aac543
10 _{VDS (V)} 10²
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN9R0-30YL_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 5 January 2010
© NXP B.V. 2010. All rights reserved.
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