PSMN2R6-40YS Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET

NXP Semiconductors
PSMN2R6-40YS
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
8
R_DSon
(mΩ)
6
4
2
V_GS (V) = 5.5
003aad191
6
8
10
20
0
0
30
60
90
120
150
I_D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 14. Gate charge waveform definitions
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
PSMN2R6-40YS_1
Product data sheet
Rev. 01 — 23 June 2009
© NXP B.V. 2009. All rights reserved.
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