PSMN2R6-40YS Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET

NXP Semiconductors
PSMN2R6-40YS
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 50 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
V_DS = 20 V
Q_r
recovered charge
I_S = 50 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
V_DS = 20 V; T_j = 25 °C
[1] Tested to JEDEC standards where applicable.
Min Typ Max Unit
-
0.78 1.2 V
-
45
-
ns
-
47
-
nC
150
I_D
20 10 8 6
(A)
120
90
60
30
0
0
0.5
1
003aad190
5.5
5
V_GS (V) = 4.5
1.5
2
V_DS (V)
6000
C
(pF)
5000
003aad196
C_iss
4000
C_rss
3000
2000
0
3
6
9 _{VGS (V)} 12
Fig 5. Output characteristics: drain current as a
Fig 6. Input and reverse transfer capacitances as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
PSMN2R6-40YS_1
Product data sheet
Rev. 01 — 23 June 2009
© NXP B.V. 2009. All rights reserved.
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