PSMN2R6-40YS Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET

NXP Semiconductors
PSMN2R6-40YS
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
100
I_D
(A)
80
60
40
20
0
0
003aad192
T_j = 150°C
T_j = 175°C
T_j = 25 °C
2
4
6
V_GS (V)
12
R_DSon
(mΩ)
9
003aad198
6
3
0
0
5
10
15
20
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
100
g_fs
(S)
80
003aad197
10^−1
I_D
(A)
10^−2
03aa35
min typ max
60
10^−3
40
10^−4
20
10^−5
0
0
20
40
60
80
100
I_D (A)
10^−6
0
2
4
6
V_GS (V)
Fig 9. Forward transconductance as a function of
drain current; typical values
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
PSMN2R6-40YS_1
Product data sheet
Rev. 01 — 23 June 2009
© NXP B.V. 2009. All rights reserved.
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