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PMD9001D Datasheet, PDF (8/15 Pages) NXP Semiconductors – MOSFET driver
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NXP Semiconductors
PMD9001D
MOSFET driver
103
hFE
102
10
006aaa015
(1)
(2)
(3)
103
VCEsat
(mV)
102
006aaa014
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 5. TR1: DC current gain as a function of collector
current; typical values
10
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 6. TR1: Collector-emitter saturation voltage as a
function of collector current; typical values
102
VI(on)
(V)
10
(1)
1
(2)
(3)
006aaa016
10
VI(off)
(V)
(1)
1
(2)
(3)
006aaa017
10−1
10−1
1
10
102
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. TR1: On-state input voltage as a function of
collector current; typical values
10−1
10−2
10−1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. TR1: Off-state input voltage as a function of
collector current; typical values
PMD9001D_1
Product data sheet
Rev. 01 — 16 November 2006
© NXP B.V. 2006. All rights reserved.
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