PMD9001D Datasheet, PDF (3/15 Pages) NXP Semiconductors – MOSFET driver

NXP Semiconductors
PMD9001D
MOSFET driver
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_BM
peak base current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
Diode (D1)
I_F
forward current
-
I_FRM
repetitive peak forward current t_p ≤ 1 ms; δ ≤ 0.25
-
I_FSM
non-repetitive peak forward square wave
current
t_p = 1 µs
-
t_p = 100 µs
-
t_p = 10 ms
-
Device
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
0.1 A
0.2 A
0.2 A
290 mW
325 mW
400 mW
−0.2 A
−0.6 A
−9
A
−3
A
−1.7 A
150 °C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
PMD9001D_1
Product data sheet
Rev. 01 — 16 November 2006
© NXP B.V. 2006. All rights reserved.
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