PMD9001D Datasheet, PDF (6/15 Pages) NXP Semiconductors – MOSFET driver

NXP Semiconductors
PMD9001D
MOSFET driver
10³
Z_th(j-a)
(K/W)
10²
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
006aaa922
1
10^-5
10^-4
10^-3
10^-2
10^-1
1
10
10²
10³
t_p (s)
Ceramic PCB, Al₂O₃, standard footprint
Fig 4. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
PMD9001D_1
Product data sheet
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Transistor 1 (TR1)
I_CBO
collector-base cut-off
current
V_CB = 50 V; I_E = 0 A
I_CEO
collector-emitter cut-off V_CE = 30 V; I_E = 0 A
current
V_CE = 30 V; I_E = 0 A;
T_j = 150 °C
I_EBO
emitter-base cut-off
current
V_EB = 5 V; I_E = 0 A
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = 5 V; I_C = 20 mA
I_C = 10 mA; I_B = 0.5 mA
V_I(off)
V_I(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
V_CE = 5 V; I_C = 0.1 mA
V_CE = 0.3 V; I_C = 20 mA
R2/R1 bias resistor ratio
Transistor 2 (TR2)
I_CBO
collector-base cut-off
current
V_CEsat collector-emitter
saturation voltage
V_CB = 30 V; I_E = 0 A
V_CB = 30 V; I_E = 0 A;
T_j = 150 °C
I_C = 10 mA; I_B = 0.5 mA
I_C = 100 mA; I_B = 5 mA
I_C = 200 mA; I_B = 20 mA
Rev. 01 — 16 November 2006
Min Typ Max Unit
-
-
100 nA
-
-
1
µA
-
-
50 µA
-
-
2
mA
30 55 -
-
60 150 mV
-
1.1
2
1.6
1.54 2.2
0.8 1
0.5 V
-
V
2.86 kΩ
1.2
-
-
15 nA
-
-
5
µA
-
60 200 mV
-
200 400 mV
-
340 500 mV
© NXP B.V. 2006. All rights reserved.
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