PHP176NQ04T Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS-TM standard level FET

NXP Semiconductors
PHP176NQ04T
N-channel TrenchMOS standard level FET
10
RDSon
(m Ω)
8
Tj = 25 °C
6
4
2
0
0
80
VGS = 6 V
03aq41
6.5 V
7V
8V
10 V
160 _{ID (A)} 240
2
a
03aa27
1.5
1
0.5
0
-60
0
60
120 _{Tj (°C)} 180
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
VGS
(V)
8
ID = 25 A
Tj = 25 °C
6
14 V
4
2
03aq45
VDD = 32 V
10⁴
C
(pF)
10³
03aq44
Ciss
Coss
Crss
0
0
20
40
60 _{QG (nC)} 80
10²
10^-1
1
10 _{VDS (V)} 10²
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP176NQ04T_2
Product data sheet
Rev. 02 — 6 March 2009
© NXP B.V. 2009. All rights reserved.
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