PHP176NQ04T Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS-TM standard level FET

PHP176NQ04T
N-channel TrenchMOS standard level FET
Rev. 02 — 6 March 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC convertors
„ General industrial applications
„ Motors, lamps and solenoids
„ Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1; see Figure 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 9;
see Figure 10
Min Typ Max Unit
-
-
40 V
-
-
75 A
-
-
250 W
-
3.8 4.3 mΩ