PHP176NQ04T Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS-TM standard level FET

NXP Semiconductors
PHP176NQ04T
N-channel TrenchMOS standard level FET
120
Ider
(%)
80
03aq46
120
P_der
(%)
80
03aa16
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS / ID
102
DC
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03aq39
tp = 10 μ s
1 ms
10 ms
100 ms
1s
1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP176NQ04T_2
Product data sheet
Rev. 02 — 6 March 2009
© NXP B.V. 2009. All rights reserved.
4 of 13