PHP160NQ08T Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP160NQ08T
N-channel TrenchMOS standard level FET
20
T_j = 25 °C 5
R_DSon V_GS (V) =
(mΩ)
15
10
5
03ap69
5.5
6
10
2.4
a
1.6
0.8
03nb25
0
0
80
160
240
I_D (A)
0
−60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
8
I_D = 25 A
T_j = 25 °C
6
14 V
4
03ap73
V_DS = 60 V
10⁴
C
(pF)
10³
03ap72
C_iss
C_oss
2
C_rss
0
0
25
50
75
100
Q_G (nC)
10²
10^−1
1
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP160NQ08T_2
Product data sheet
Rev. 02 — 10 March 2009
© NXP B.V. 2009. All rights reserved.
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