PHP160NQ08T Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP160NQ08T
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1
V_GS = 10 V; T_mb = 25 °C; see Figure 1;
see Figure 3
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
t_p ≤ 10 µs; pulsed; T_mb = 25 °C; see Figure 3
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
E_DS(AL)S
non-repetitive
V_GS = 10 V; T_j(init) = 25 °C; I_D = 75 A; V_sup ≤ 75 V;
drain-source avalanche unclamped; t_p = 0.15 ms; R_GS = 50 Ω
energy
Min Max Unit
-
75
V
-
75
V
-20 20
V
-
75
A
-
75
A
-
240 A
-
300 W
-55 175 °C
-55 175 °C
-
75
A
-
240 A
-
560 mJ
PHP160NQ08T_2
Product data sheet
Rev. 02 — 10 March 2009
© NXP B.V. 2009. All rights reserved.
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