PHP160NQ08T Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP160NQ08T
N-channel TrenchMOS standard level FET
240
T_j = 25 °C ¹⁰
I_D
V_GS (V) =
(A)
160
03ap68
6
5.5
75
I_D
(A)
50
03ap70
80
5
4.5
0
0
1
2
3
4
V_DS (V)
25
0
0
T_j = 175 °C
25 °C
2
4
6
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
5
V_GS(th)
(V)
4
max
03aa32
10^−3
3
typ
10^−4
2
min
10^−5
1
10^−6
0
2
4
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PHP160NQ08T_2
Product data sheet
Rev. 02 — 10 March 2009
© NXP B.V. 2009. All rights reserved.
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