PBHV8540Z Datasheet, PDF (8/12 Pages) NXP Semiconductors – 500 V, 0.5 A NPN high-voltage low VCEsat(BISS) transistor

NXP Semiconductors
8. Test information
PBHV8540Z
500 V, 0.5 A NPN high-voltage low V_CEsat (BISS) transistor
V_BB
V_CC
(probe)
oscilloscope
450 Ω
V_I
R_B
R2
R1
Fig 12. Test circuit for switching times
R_C
V_{o (probe)}
oscilloscope
450 Ω
DUT
mlb826
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
7.3 3.7
6.7 3.3
6.7
6.3
3.1
2.9
4
1.8
1.5
1.1
0.7
1
2
2.3
4.6
Dimensions in mm
Fig 13. Package outline SOT223 (SC-73)
3
0.8
0.6
0.32
0.22
04-11-10
10. Packing information
PBHV8540Z_1
Product data sheet
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.^[1]
Type number Package
Description
PBHV8540Z SOT223
8 mm pitch, 12 mm tape and reel
Packing quantity
1 000
4 000
-115
-135
[1] For further information and the availability of packing methods, see Section 14.
Rev. 01 — 7 February 2008
© NXP B.V. 2008. All rights reserved.
8 of 12