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PBHV8540Z Datasheet, PDF (4/12 Pages) NXP Semiconductors – 500 V, 0.5 A NPN high-voltage low VCEsat(BISS) transistor
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NXP Semiconductors
PBHV8540Z
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
ambient
Rth(j-sp)
thermal resistance from junction to
solder point
Conditions
in free air
Min Typ Max
[1] -
-
175
[2] -
-
89
- - 20
Unit
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
103
Zth(j-a)
(K/W) duty cycle = 1
102 0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
10
006aab156
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33
0.2
10 0.1
0.05
0.02 0.01
10
006aab157
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8540Z_1
Product data sheet
Rev. 01 — 7 February 2008
© NXP B.V. 2008. All rights reserved.
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