PBHV8540Z Datasheet, PDF (3/12 Pages) NXP Semiconductors – 500 V, 0.5 A NPN high-voltage low VCEsat(BISS) transistor

NXP Semiconductors
PBHV8540Z
500 V, 0.5 A NPN high-voltage low V_CEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage
open base
-
V_CESM collector-emitter peak voltage
V_BE = 0 V
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_BM
peak base current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2]
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
500 V
400 V
500 V
6
V
0.5 A
1
A
200 mA
0.7 W
1.4 W
150 °C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm².
1600
P_tot
(1)
(mW)
1200
006aab155
800
(2)
400
0
−75
−25
25
75
(1) FR4 PCB, mounting pad for collector 6 cm²
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
T_amb (°C)
PBHV8540Z_1
Product data sheet
Rev. 01 — 7 February 2008
© NXP B.V. 2008. All rights reserved.
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