BUK754R3-75C Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
200
I_D
(A)
100
003aab382
T_j = 25 °C
10
V_GS
(V)
8
6
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V_DS = 14 V
V_DS = 60 V
4
2
T_j = 175 °C
0
0
2
4
6 _{VGS (V)} 8
0
0
50
100
150
200
Q_G (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
250
I_S
(A)
200
150
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10³
I_AL
(A)
10²
003aab385
(1)
100
T_j = 175 °C
50
T_j = 25 °C
0
0
0.5
1
1.5 _{VSD (V)} 2
V_GS = 0 V
Fig 15. Source current as a function of source-drain
voltage; typical values
(2)
10
1
10^-3
10^-2
(3)
10^-1
1
10
t_AL (ms)
See Table note 4 of Table 3 “Limiting values”.
(1) Single-pulse; T_j = 25 °C.
(2) Single-pulse; T_j = 150 °C.
(3) Repetitive.
Fig 16. Single-pulse and repetitive avalanche rating;
avalanche current as a function of avalanche
time
BUK75_7E4R3-75C_1
Product data sheet
Rev. 01 — 10 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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