BUK754R3-75C Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
BUK754R3-75C
SC-46
BUK7E4R3-75C
I2PAK
4. Limiting values
Description
Version
plastic single-ended package; heatsink mounted; 1 mounting hole; SOT78
3-lead TO-220AB
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
R_GS = 20 kΩ
V_GS = 10 V; see Figure 2 and 3
limited by power dissipation at T_mb = 25 °C
limited by package at T_mb = 25 °C
limited by package at T_mb = 100 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_mb = 25 °C; see Figure 1
I_DR
reverse drain current
T_mb = 25 °C
limited by power dissipation
limited by package
I_DRM
peak reverse drain current
Avalanche ruggedness
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
E_DS(AL)S non-repetitive drain-source
avalanche energy
E_DS(AL)R repetitive drain-source
avalanche energy
unclamped inductive load; I_D = 100 A; V_DS ≤ 75 V;
R_GS = 50 Ω; V_GS = 10 V; starting at T_j = 25 °C
[1] Refer to document 9397 750 12572 for further information.
[2] Current is limited by chip power dissipation rating.
[3] Continuous current is limited by package.
[4] Conditions:
a) Maximum value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by T_j(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note AN10273 for further information.
Min
-
-
-
[1]
[2] _-
[3] _-
[3] _-
-
-
−55
−55
[1]
[2] _-
[3] _-
-
-
[4] _-
Max Unit
75
V
75
V
±20
V
192
A
100
A
100
A
769
A
333
W
+175 °C
+175 °C
192
A
100
A
769
A
630
mJ
-
mJ
BUK75_7E4R3-75C_1
Product data sheet
Rev. 01 — 10 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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