BUK754R3-75C Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
40
03aa16
200
I_D
(A)
150
100
(1)
50
003aab376
0
0
50
100
150
200
T_mb (°C)
P_der = _P----_t--_o--^P-_t-₍--^t2-^o--₅-^t-_°---_C---₎ × 100 %
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10³
I_D
Limit R_DSon = V_DS / I_D
(A)
10²
(1)
10
1
0
0
50
100
150
200
T_mb (°C)
V_GS ≥ 10 V
(1) Capped at 100 A due to package.
Fig 2. Continuous drain current as a function of
mounting base temperature
003aab393
t_p = 10 µs
100 µs
1 ms
10 ms
100 ms
DC
10^-1
10^-1
1
10
V_DS (V)
10²
T_mb = 25 °C; I_DM is single pulse.
(1) Capped at 100 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK75_7E4R3-75C_1
Product data sheet
Rev. 01 — 10 August 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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