BUK212-50Y Datasheet, PDF (8/16 Pages) NXP Semiconductors – Single channel high-side TOPFET™

Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
4
IS
(mA)
3
2
03pa38
80
IL
(A)
60
40
03pa63
VBL(off)
1
20
0
0
1
2
3
4
VSG (V)
0
0
4
8 _{VBL (V)} 12
V_BG = 13 V; V_IG = 5 V; T_j = 25 °C
Fig 7. Status current as a function of status-ground
voltage; typical values.
V_BG = 16 V; V_IG = 5 V; T_mb = 25 °C (the device trips after
200 µs (typical), and status goes LOW).
Fig 8. Load current limiting as a function of
battery-load voltage; typical values.
3.5
VIG
(V)
3
2.5
2
1.5
03pa36
max
VIG _(on)
VIG _(off)
min
8
IB
(µ A)
6
4
2
03pa64
1
-50
0
50
100
150
200
Tj (°C)
0
-50
0
50
100
150
200
Tj (°C)
9 V ≤ V_BG ≤ 16 V
Fig 9. Input-ground voltage as a function of junction
temperature.
V_BG = 16 V
Fig 10. Battery quiescent current as a function of
junction temperature; typical values.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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