BUK212-50Y Datasheet, PDF (7/16 Pages) NXP Semiconductors – Single channel high-side TOPFET™

Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
25
RBLon
(mΩ)
20
Tj = 150 °C
03pa65
15
Tj = 25 °C
10
Tj = -40 °C
5
0
0
8
16
24
32
40
VBG (V)
I_L = 20 A; V_IG = 5 V
Fig 5. Battery-load on-state resistance as a function of battery-ground supply voltage; typical values.
4
IG
(mA)
3
undervoltage
shutdown
2
1
Tj = −40 °C
Tj = 25 °C
Tj = 150 °C
overvoltage
shutdown
03pa55
clamping
0
0
25
50
VBG (V)
75
V_IG = 5 V
Fig 6. Supply current characteristics: operating current as a function of battery-ground supply voltage; typical
values.
9397 750 10768
Product data
Rev. 01 — 17 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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