BUK212-50Y Datasheet, PDF (1/16 Pages) NXP Semiconductors – Single channel high-side TOPFET™

BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
Rev. 01 — 17 March 2003
Product data
1. Product profile
1.1 Description
Monolithic temperature and overload protected single high-side power switch based
on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic
package.
Product availability:
BUK212-50Y in SOT263B-01
BUK217-50Y in SOT426 (D²-PAK).
1.2 Features
s Very low quiescent current
s Power TrenchMOS™
s Overtemperature protection
s Over and undervoltage protection
s Reverse battery protection
s Low charge pump noise
s Loss of ground protection
s CMOS logic capability
s Negative load clamping
s Overload protection
s ESD protection for all pins
s Diagnostic status indication
s Operating voltage down to 5.5 V
s Current limitation.
1.3 Applications
s 12 V and 24 V grounded loads
s Inductive loads
s High inrush current loads
s Replacement for relays and fuses.
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Min
R_BLon
battery-load on-state resistance
-
I_L
load current
-
I_L(nom)
nominal load current (ISO)
25
I_L(lim)
self-limiting load current
47
V_BG(oper) battery-ground operating voltage 5.5
Max
Unit
14
mΩ
44
A
-
A
100
A
35
V