BUK100-50GS Datasheet, PDF (8/11 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK100-50GS
VDD
RL
D
TOPFET
I
P
D.U.T.
RI
VIS
S
ID measure
0V
0R1
Fig.20. Test circuit for resistive load switching times.
VDD = VCL
LD
t _{p : adjust for correct ID}
D
TOPFET
I
P
D.U.T.
RI
VIS
S
ID measure
0V
0R1
Fig.23. Test circuit for inductive load switching times.
RESISTIVE TURN-ON
10
BUK100-50GS
VIS / V
5
tr
ID / A
90%
10%
10%
0
td on
VDS / V
0
10
20
time / us
Fig.21. Typical switching waveforms, resistive load.
V_DD = 13 V; R_L = 4 Ω; R_I = 50 Ω, T_j = 25 ˚C.
RESISTIVE TURN-OFF
td off
10
90%
BUK100-50GS
VDS / V
VIS / V
tf
5
ID / A
90%
10%
0
0
10
20
time / us
Fig.22. Typical switching waveforms, resistive load.
V_DD = 13 V; R_L = 4 Ω; R_I = 50 Ω, T_j = 25 ˚C.
INDUCTIVE TURN-ON
VDS
10
BUK100-50GS
VIS / V
td on
5
10%
0
tr
90%
10%
ID / A
0
2
4
6
8
10
time / us
Fig.24. Typical switching waveforms, inductive load.
V_DD = 13 V; I_D = 3 A; R_I = 50 Ω, T_j = 25 ˚C.
15 ^{INDUCTIVE TURN-OFF}
BUK100-50GS
td off
10
90%
VDS / V
VIS / V
tf
5
ID / A
90%
10%
0
0
10
20
time / us
Fig.25. Typical switching waveforms, inductive load.
V_DD = 13 V; I_D = 3 A; R_I = 50 Ω, T_j = 25 ˚C.
November 1996
8
Rev 1.300