BUK100-50GS Datasheet, PDF (5/11 Pages) NXP Semiconductors – PowerMOS transistor TOPFET

Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK100-50GS
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised limiting power dissipation.
P_D% = 100⋅P_D/P_D(25 ˚C) = f(T_mb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.3. Normalised continuous drain current.
I_D% = 100⋅I_D/I_D(25 ˚C) = f(T_mb); conditions: V_IS = 5 V
ID & IDM / A
100
RDS(ON) ^{= VDS/ID}
10
DC
1
BUK100-50GS
tp =
10 us
100 us
1 ms
10 ms
100 ms
Overload protection characteristics not shown
0.1
1
10
100
VDS / V
Fig.4. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth / (K/W)
10
BUK100-50GS
D=
0.5
1
0.2
0.1
0.05
0.1 _0.02
P_D
tp
D=
tp
T
0
0.01
1E-07
1E-05
1E-03
t/s
T
t
1E-01
Fig.5. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
1E+01
ID / A
60
11
10
BUK100-50GS
50
9
8
40
7
30
6
20
5
4
10
3
0
0
4
8
12
16
20
24
28
32
VDS / V
Fig.6. Typical output characteristics, T_j = 25 ˚C.
ID = f(V_DS); parameter V_IS; t_p = 250 µs & t_p < t_{d sc}
ID / A
50
40
30
20
BUK100-50GS
VIS / V = 8 9 10
7
6
5
10
4
0
0
1
2
3
4
5
VDS / V
Fig.7. Typical on-state characteristics, T_j = 25 ˚C.
ID = f(V_DS); parameter V_IS; t_p = 250 µs
November 1996
5
Rev 1.300