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| BUJ303A_11 Datasheet, PDF (8/14 Pages) NXP Semiconductors – NPN power transistor Low thermal resistance Fast switching | |||
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NXP Semiconductors
BUJ303A
NPN power transistor
1.4
VBEsat
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
10-1
003aag033
1
10
IC (A)
102
hFE
10
003aag034
VCE = 5 V
1
10-2
10-1
1V
1
10
IC (A)
Fig 10. Base-emitter saturation voltage as a function of Fig 11. DC current gain as a function of collector
collector current; typical values
current; typical values
VIM
0
tp
T
VCC
RL
RB
DUT
001aab989
Fig 12. Test circuit for resistive load switching
IC
90 %
ICon
90 %
IB
ton
ts
toff
IBon
10 %
t
tf
10 %
tr ⤠30 ns
âIBoff
t
001aab990
Fig 13. Switching times waveforms for resistive load
BUJ303A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 â 3 May 2011
© NXP B.V. 2011. All rights reserved.
8 of 14
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