BUJ303A_11 Datasheet, PDF (4/14 Pages) NXP Semiconductors – NPN power transistor Low thermal resistance Fast switching

NXP Semiconductors
BUJ303A
NPN power transistor
10²
I_C
(A)
I_CMm¹_a⁰_x
I_Cmax
1
003aag029
duty cycle = 0.01
II₍₃₎
t_p = 10 µs
(1)
100 µs
10^-1
(2)
1 ms
I₍₃₎
10 ms
DC
Fig 4.
10^-2
1
III₍₃₎
10
10²
10³
V_CEclamp (V)
(1) P_tot maximum and P_tot peak maximum lines.
(2) Second breakdown limits.
(3) I = Region of permissible DC operation.
II = Extension for repetitive pulse operation.
III = Extension during turn-on in single transistor converters provided that R_BE ≤ 100 Ω and t_p ≤ 0.6 μs.
Forward bias safe operating area for T_mb ≤ 25 °C
BUJ303A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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