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BUJ303A_11 Datasheet, PDF (3/14 Pages) NXP Semiconductors – NPN power transistor Low thermal resistance Fast switching
NXP Semiconductors
VCC
LC
VCL(CE)
probe point
IBon
LB
VBB
DUT
001aab999
12
IC
(A)
8
4
BUJ303A
NPN power transistor
003aag028
0
0
400
800
1200
VCEclamp (V)
Fig 1. Test circuit for reverse bias safe operating area Fig 2. Reverse bias safe operating area
120
Pder
(%)
80
001aab993
40
0
0
40
80
120
160
Tmb (°C)
Fig 3. Normalized total power dissipation as a function of mounting base temperature
BUJ303A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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