BUJ105AD Datasheet, PDF (8/12 Pages) NXP Semiconductors – Silicon diffused power transistor

Philips Semiconductors
BUJ105AD
Silicon diffused power transistor
8. Package outline
Plastic single-ended surface mounted package (D-PAK); 3 leads (one lead cropped)
SOT428
E
A
b₂
y
A
A₁
D₁
H_D
mounting
base
L₂
b₁
2
1
L
3
b
e
e₁
wM A
L₁
c
E₁
D₂
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A₁
b
b₁
b₂
c
D₁
D₂
min
E
E₁
min
e
e₁
H_D
L
L₁
min
L₂
mm
2.38
2.22
0.93
0.73
0.89
0.71
1.1
0.9
5.46 0.56 6.22
5.00 0.20 5.98
4.0
6.73
6.47
4.45 2.285 4.57
10.4
9.6
2.95
2.55
0.5
0.9
0.5
w
y
max
0.2 0.2
OUTLINE
VERSION
IEC
SOT428
REFERENCES
JEDEC
JEITA
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
01-12-11
04-10-14
Fig 16. Package outline SOT428 (SC-63)
9397 750 14196
Product data sheet
Rev. 01 — 14 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
8 of 12