BUJ105AD Datasheet, PDF (3/12 Pages) NXP Semiconductors – Silicon diffused power transistor

Philips Semiconductors
5. Thermal characteristics
Table 4:
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see Figure 2
[1] Device mounted on a printed-circuit board; minimum footprint
BUJ105AD
Silicon diffused power transistor
Min Typ Max Unit
-
-
1.56 K/W
[1] _-
75
-
K/W
001aab998
10
Z_th(j-mb)
(K/W)
1 ^{δ = 0.5}
10^−1
0.2
0.1
0.05
0.02
0.01
P_tot
t_p
δ=
T
10^−2
10^−5
10^−4
10^−3
10^−2
10^−1
t_p
t
T
1
10
t_p (s)
Fig 2. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 5: Characteristics
T_mb = 25 °C; unless otherwise specified.
Symbol Parameter
Static characteristics
I_CES
collector-emitter cut-off current
I_CBO
I_CEO
I_EBO
V_CEOsus
V_CEsat
V_BEsat
h_FE
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
collector-emitter sustaining
voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
DC current gain
h_FEsat
DC saturation current gain
Conditions
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax; T_j = 125 °C
V_BE = 0 V; V_CE = V_CESMmax
V_CEO = V_CEOMmax = 400 V
V_EB = 9 V; I_C = 0 A
I_B = 0 A; I_C = 10 mA; L = 25 mH;
see Figure 3 and 4
I_C = 4.0 A; I_B = 0.8 A; see Figure 11
I_C = 4.0 A; I_B = 0.8 A; see Figure 12
I_C = 1 mA; V_CE = 5 V
I_C = 500 mA; V_CE = 5 V; see Figure 10
I_C = 4.0 A; V_CE = 5 V
Min Typ Max Unit
[1] _-
-
[1] _-
-
[1] _-
-
[1] _-
-
-
-
400 -
0.2 mA
0.5 mA
0.2 mA
0.1 mA
1
mA
-
V
-
0.3 1.0 V
-
1.0 1.5 V
10 14 34
13 23 36
8
11 15
9397 750 14196
Product data sheet
Rev. 01 — 14 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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