BUJ105AD Datasheet, PDF (7/12 Pages) NXP Semiconductors – Silicon diffused power transistor

Philips Semiconductors
BUJ105AD
Silicon diffused power transistor
0.6
V_CEsat
(V)
0.4
0.2
001aac048
T_j = 100 °C
25 °C
−40 °C
V_CC
L_C
V_CEclamp
probe point
I_Bon
L_B
V_BB
DUT
001aab999
0
10^−1
I_C/I_B = 4.
1
10
I_C (A)
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
10
I_C
(A)
8
V_CEclamp < 700 V; V_CC = 150 V; V_BB = −5 V, −3 V and
−1 V; L_B = 1 µH; L_C = 200 µH.
Fig 14. Test circuit for reverse bias safe operating area
001aac049
6
V_BB = −5 V
4
−3 V
−1 V
2
0
0
200
400
600
800
V_CEclamp (V)
T_j < T_j(max).
Fig 15. Reverse bias safe operating area
7. Package information
Epoxy meets requirements of UL94 V-0 at ¹â„₈ inch.
9397 750 14196
Product data sheet
Rev. 01 — 14 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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